Samsung has recently launched a series of high-end automotive memory solutions designed for the next generation of self-driving electric vehicle applications. The new product lineup includes 256GB PCIe Gen3 NVMe ball grid array (BGA) packaged SSDs for high-performance in-vehicle infotainment systems, 2GB GDDR6 and 2GB DDR4 DRAM products, and 2GB GDDR6 DRAM and 128GB UFS ( General-purpose flash memory) products.
Samsung stated that with the popularity of electric vehicles and the rapid development of infotainment and autonomous driving systems, semiconductor automotive platforms are facing a paradigm shift. The replacement cycle of the past 7 to 8 years has now been compressed to 3 to 4 years. At the same time, performance and capacity are improving to the common level of server applications.
At the same time, the advanced functions of infotainment systems, such as high-definition maps, video streaming and 3D games, and the use of autonomous driving systems have become increasingly frequent, driving the entire automotive industry to adopt large-capacity, high-performance solid-state drives SSDs and graphics DRAM products. development of.
In 2017, Samsung launched the UFS solution for automotive applications, and now it can provide a total memory solution including a new automotive-grade SSD and GDDR6 DRAM. According to reports, the internal controller and firmware of Samsung’s 256GB BGA package SSD products are independently developed to achieve performance optimization.
The sequential read speed is 2100MB/s and the sequential write speed is 300MB/s. In addition, 2GB GDDR6 DRAM has a data rate of 14Gbps per pin, which can support the complex processing of various multimedia applications and big data processing for autonomous driving.
In addition, it can also support some potential other applications, such as recording for reasoning in autonomous vehicles Trained driving information, OTA software updates, etc. Samsung’s new automotive memory products have completed customer evaluation and are now entering mass production.