According to the enterprise search app, Huawei Technologies Co., Ltd. recently published a patent for “Graphene Field Effect Transistor” with the publication number CN110323266B. The patent summary shows that the application provides a graphene field-effect transistor, which relates to the field of semiconductor technology, which can increase the output resistance of the device, thereby increasing the switching ratio and achieving better radio frequency performance.
A graphene field-effect transistor includes a substrate, a first gate electrode, a second gate electrode, a first gate dielectric layer, a second gate dielectric layer, a channel layer, source and drain electrodes.
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In addition, the material of the channel layer includes AB stacked double-layer graphene or AB stacked multi-layer graphene; the first gate electrode and the first gate dielectric layer are arranged on one side of the channel layer, and the second gate electrode and the second The gate dielectric layer is arranged on the other side of the channel layer; the first gate electrode includes a plurality of first sub-electrodes and first connecting sub-electrodes arranged at intervals; the extending direction of the first sub-electrodes and the distance between the source electrode and the drain electrode Cross, the projections of the first connecting sub-electrode and the channel layer on the substrate do not overlap; the first sub-electrode and the second gate electrode are used to provide the channel layer with a vertical electric field perpendicular to the channel layer.
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