Samsung released three power management chips for DDR5 memory

Recently, many manufacturers have announced the launch of DDR5 memory modules, which will be applied to the future Intel 12th-generation Core platform. According to TheElec, Samsung officially announced the launch of three power management chips (switching power supply chips) for DDR5 memory on May 19 to achieve high-efficiency DC step-down.

Since the DDR5 standard transfers the DC power supply function from the motherboard to the memory module, each memory module will additionally include a set of DC-DC DC transformer circuits. This method will undoubtedly increase costs, but it can ensure the quality of the power supply, improve efficiency, and support memory to increase voltage overclocking.

Samsung said that the new power management chip has good compatibility, which is conducive to improving the reliability and durability of the memory stick. The three-chip models are S2FPD01, S2FPD02, and S2FPC01, all of which use a hybrid gate drive design and a new asynchronous two-phase step-down control scheme. Officials say that this technology can achieve 91% transformation efficiency.

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At the same time, this power chip can allow the output direct current to be quickly reduced from a high voltage to a low voltage, which can be changed in real-time. The chip can also adjust the frequency and depth of the switching power supply to prevent malfunctions when switching modes.

Samsung S2FPD01 and S2FPD02 chips are suitable for memory sticks used in data centers and servers. The former is suitable for low-capacity memory, and the latter is suitable for high-capacity memory. The S2FPC01 chip is designed for desktop computers and smartphones with a smaller size. Samsung officials said that samples of these three power management chips are currently being sent to memory manufacturers.

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