Today, Samsung announced the development of its first 512GB memory expander (CXL, Compute Express Link) DRAM, which will achieve higher memory capacity and lower latency in IT systems.
Previously, Samsung unveiled its first CXL DRAM prototype with a Field Programmable Gate Array (FPGA) controller in May 2021. The new CXL DRAM uses an application-specific integrated circuit (ASIC) CXL controller and packages 512GB of DDR5 DRAM for the first time.
Official data shows that compared with the previous Samsung CXL products, the new CXL DRAM memory capacity is 4 times that and the system latency is one-fifth.
Samsung said that the 512GB CXL DRAM will be Samsung’s first memory device supporting the PCIe 5.0 interface, using the EDSFF (E3.S) form factor, which is especially suitable for the next generation of high-capacity enterprise servers and data centers. Later this month, Samsung will also announce an updated version of its open-source Scalable Memory Development Kit (SMDK).
According to reports, starting in the third quarter of this year, Samsung plans to provide 512GB CXL DRAM samples to customers and partners for joint evaluation and testing. And plans to prepare for the commercialization of this CXL DRAM product with the launch of the next-generation server platform.