Samsung plans to double the transition speed to DDR5 chips in the second half of the year

Samsung Electronics announced a plan for a new generation of memory chips on Thursday. Its memory speed will be doubled on the basis of existing technology and provide the largest capacity to date, thus opening a transformation that will accelerate the development of data centers and supercomputing.

As the world’s largest memory chip manufacturer, Samsung said it has developed a 512GB double data rate 5 (DDR5) memory module based on the HKMG manufacturing process traditionally used for logic chips. The memory speed of DDR5 will be twice that of the current DDR4 while reducing leakage and reducing power consumption by 13%. Samsung said it expects to begin the transition to DDR5 in the second half of this year.

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The chip industry has been expecting that Intel’s upcoming Xeon scalable processor code-named Sapphire Rapids will adopt and support the new memory standard. Samsung said that in addition to cooperating with the two main CPU suppliers Intel and AMD, Samsung also sent new memory samples to developers of data center platforms.

Analysts estimate that DDR5 chips will be about 20% larger than DDR4 chips, which will increase the pressure on the semiconductor supply chain. Samsung intends to start shipping this year and gradually improve its manufacturing process (expanding the use of extreme ultraviolet lithography technology) and pricing. The company said that the replacement of DDR4 by DDR5 is expected to occur in the second half of 2023.

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